Beschreibung

This proceedings investigates the relationship between features at the atomic level including oxygen vacancies, stacking faults and site order/disorder, grain boundaries, film-substrate interactions, buffer-superconductor interactions, thermodynamic, transport, and other macroscopic properties. This proceedings will also cover fundamental material properties studies, new growth methods, device and materials integration research, and developments in designing and growing new materials, all involving epitaxial superconducting thin films.

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