Beschreibung

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.

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